APTGT50DSK120T3 APTGT50DSK120T3 ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 75 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 270 w rbsoa reverse bias save operating area t j = 125c 100a @ 1150v these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . 22 13 14 10 q1 11 q2 7 8 23 cr2 cr1 15 r1 29 30 31 32 16 18 19 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 1200v i c = 50a @ tc = 80c applicatio n ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outsta ndi ng perfor ma nce at hi gh freq uenc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a single buck of twice the current capability. d ual buc k choppe r trench igbt ? power module
APTGT50DSK120T3 APTGT50DSK120T3 ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 2ma 1200 v i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 5 ma t j = 25c 1.4 1.7 2.1 v ce(on) collector emitter on voltage v ge =15v i c = 50a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3600 c rss reverse transfer capacitance v ge = 0v,v ce = 25v f = 1mhz 160 pf t d(on) tur n-o n delay ti me 90 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 50a r g = 18 ? 70 ns t d(on) tur n-o n delay ti me 90 t r rise time 50 t d(off) turn-off delay time 520 t f fall time 90 ns e on tur n-o n switchi ng energy x 5 e off turn-off switching energy y inductive switching (125c) v ge = 15v v bus = 600v i c = 50a r g = 18 ? 5.5 mj x e on includes diode reverse recovery y in accordance with jedec standard jesd24-1 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle tc = 70c 60 a i f = 60a 2 2.5 i f = 120a 2.3 v f diode forward voltage i f = 60a t j = 125c 1.8 v t j = 25c 400 t rr reverse recovery time t j = 125c 470 ns t j = 25c 1200 q rr reverse recovery charge i f = 60a v r = 800v di/dt =200a/s t j = 125c 4000 nc
APTGT50DSK120T3 APTGT50DSK120T3 ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 3 - 5 temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.45 r thjc junction to case diode 0.9 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 4.7 n.m wt package weight 110 g package outline 17 12 28 1 t: thermistor temperature r t : thermistor value at t
APTGT50DSK120T3 APTGT50DSK120T3 ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 20 40 60 80 100 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 2 4 6 8 10 12 10 30 50 70 90 110 i c (a) e (mj) v ce = 600v v ge = 15v r g = 18 ? t j = 125c eon eoff 4 5 6 7 8 9 10 11 12 0 20406080 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 50a t j = 125c switching energy losses vs gate resistance reverse safe operating area 0 20 40 60 80 100 120 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =18 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT50DSK120T3 APTGT50DSK120T3 ? rev 0, september, 2004 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c 0 20 40 60 80 100 120 140 160 00.511.522.53 v f (v) i c (a) hard switching zcs zv s 0 20 40 60 80 0 102030405060 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =18 ? t j =125c t c =75c operatin g frequenc y vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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